Increasing etching depth of sapphire nanostructures using multilayer etching mask
نویسندگان
چکیده
منابع مشابه
Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.
Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) ind...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B
سال: 2019
ISSN: 2166-2746,2166-2754
DOI: 10.1116/1.5119388